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750 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS150R12KT4BOSA1 by Infineon Technologies

FS150R12KT4BOSA1

Infineon Technologies

FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.

ISOLATED

150 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

750 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

605 ns

165 ns

2.1 V

FS400R07A1E3H5BPSA1 by Infineon Technologies

FS400R07A1E3H5BPSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 500 A; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel; Nominal Turn Off Time (toff): 580 ns;

ISOLATED

500 A

650 V

6.5 V

20 V

150 Cel

-40 Cel

N-Channel

750 W

SILICON

580 ns

200 ns

1.9 V

IFS150B12N3E4PB11BPSA1 by Infineon Technologies

IFS150B12N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 220 A; Terminal Form: UNSPECIFIED;

ISOLATED

220 A

1200 V

COMPLEX

6.35 V

20 V

R-XUFM-X41

6

41

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

640 ns

240 ns

2.1 V

FGY100T65SCDT by Onsemi

FGY100T65SCDT

Onsemi

FGY100T65SCDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 200A. Ideal for GENERAL PURPOSE SWITCHING applications, it has a max operating temperature of 175 °C and a nominal turn off time of 410ns.

FAST SWITCHING

COLLECTOR

200 A

650 V

SINGLE WITH BUILT-IN DIODE

6.9 V

25 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

GENERAL PURPOSE SWITCHING

SILICON

410 ns

240 ns

1.9 V

STGYA75H120DF2 by STMicroelectronics

STGYA75H120DF2

STMicroelectronics

STMicroelectronics' STGYA75H120DF2 is an N-CHANNEL IGBT with 1200V VCE, 150A IC, and 750W Pmax. Ideal for POWER CONTROL applications due to its low VCEsat of 2.6V and fast turn-off time of 406ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

406 ns

95 ns

2.6 V