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6250 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DF1000R17IE4DB2BOSA1 by Infineon Technologies

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL;

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X12

1

12

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

6250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1910 ns

830 ns

2.45 V

FD1000R17IE4DB2BOSA1 by Infineon Technologies

FD1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

1390 A

1700 V

6.4 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

1910 ns

830 ns

2.45 V

FF1000R17IE4DB2BOSA1 by Infineon Technologies

FF1000R17IE4DB2BOSA1

Infineon Technologies

Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.

ISOLATED

1390 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-PUFM-X12

2

12

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

6250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1400 ns

760 ns

2.45 V

FF800R17KF6CB2NOSA1 by Infineon Technologies

FF800R17KF6CB2NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1240 ns; Nominal Turn On Time (ton): 540 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

1300 A

1700 V

6.5 V

20 V

125 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

1240 ns

540 ns

3.1 V

2PS12017E44G35911NOSA1 by Infineon Technologies

2PS12017E44G35911NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1700 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 1060 ns; Nominal Turn Off Time (toff): 2380 ns;

ISOLATED

1700 A

1700 V

6.4 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

2380 ns

1060 ns

2.2 V