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55 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD7NB120S-1 by STMicroelectronics

STGD7NB120S-1

STMicroelectronics

STGD7NB120S-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 10A IC, and 55W Pd. Ideal for MOTOR CONTROL applications due to its SILICON material, 150 °C max temp, and 840ns turn on time. Package: PLASTIC/EPOXY IN-LINE with THROUGH-HOLE terminals.

10 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

840 ns

STGD5NB120SZ-1 by STMicroelectronics

STGD5NB120SZ-1

STMicroelectronics

STGD5NB120SZ-1 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, 10 A collector current, and operates at up to 150 °C. Its built-in diode enhances performance in various electronic systems.

COLLECTOR

10 A

1200 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5 V

20 V

TO-251AA

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

55 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

14100 ns

850 ns