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529 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AFGHL40T120RLD by Onsemi

AFGHL40T120RLD

Onsemi

AFGHL40T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 529W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.3 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

529 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

276 ns

80 ns

2.1 V