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4800 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD400R33KF2CNOSA1 by Infineon Technologies

FD400R33KF2CNOSA1

Infineon Technologies

Infineon's FD400R33KF2CNOSA1 is an N-CHANNEL IGBT with 3300V VCE, 660A IC, and 4800W power dissipation. Ideal for power control applications due to its 1900ns turn-off time and 480ns turn-on time. Package style is flange mount with isolated case connection.

ISOLATED

660 A

3300 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

4.25 V

FZ250R65KE3NPSA1 by Infineon Technologies

FZ250R65KE3NPSA1

Infineon Technologies

Infineon's FZ250R65KE3NPSA1 IGBT offers 6500V VCE, 250A IC, and 4800W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.

250 A

6500 V

20 V

1

150 Cel

NOT SPECIFIED

4800 W

Insulated Gate BIP Transistors

NOT SPECIFIED

3.4 V

FF400R33KF2CNOSA1 by Infineon Technologies

FF400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Terminals: 10;

ISOLATED

660 A

3300 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FD600R17KF6CB2NOSA1 by Infineon Technologies

FD600R17KF6CB2NOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 975 A; Maximum VCEsat: 3.1 V; Case Connection: ISOLATED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

ISOLATED

975 A

1700 V

6.5 V

20 V

NOT SPECIFIED

N-Channel

4800 W

NOT SPECIFIED

SILICON

1220 ns

470 ns

3.1 V