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454.5 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
A2P75S12M3 by STMicroelectronics

A2P75S12M3

STMicroelectronics

A2P75S12M3 by STMicroelectronics is an N-channel IGBT designed for motor control applications. It features a max VCEsat of 2.3V, supports up to 75A collector current, and operates at temperatures from -40 °C to 150 °C. Its bridge configuration with 6 elements ensures efficient performance.

ISOLATED

75 A

1200 V

BRIDGE, 6 ELEMENTS

7 V

20 V

R-XUFM-X33

6

33

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

454.5 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

517 ns

235 ns

2.3 V