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405 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB40N65IHRTG by Onsemi

NGTB40N65IHRTG

Onsemi

NGTB40N65IHRTG by Onsemi is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and toff of 316ns. Ideal for POWER CONTROL applications due to its high power dissipation of 405W and max VCE of 650V. The package style is FLANGE MOUNT with a COLLECTOR case connection.

LOW CONDUCTION LOSS

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

405 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

316 ns

1.7 V

NGTB40N65IHRWG by Onsemi

NGTB40N65IHRWG

Onsemi

NGTB40N65IHRWG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.7V and a max IC of 80A, ideal for power control applications. It has a package style of FLANGE MOUNT, can handle up to 650V and dissipate 405W, making it suitable for high-power operations in various industries.

LOW CONDUCTION LOSS

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

405 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

316 ns

1.7 V