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395 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IKZ75N65EH5XKSA1 by Infineon Technologies

IKZ75N65EH5XKSA1

Infineon Technologies

Infineon IKZ75N65EH5XKSA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 90A, and Ptot of 395W. Ideal for POWER CONTROL applications due to its fast ton of 37ns and low toff of 415ns. Operates in temperatures from -40°C to 175°C, making it suitable for various industrial power systems.

COLLECTOR

90 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

R-PSFM-T4

e3

1

4

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

395 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

415 ns

37 ns

2.1 V

RGS50TSX2DHRC11 by ROHM

RGS50TSX2DHRC11

ROHM

ROHM's RGS50TSX2DHRC11 IGBT is a single N-channel transistor with built-in diode, ideal for power control applications. With a max VCEsat of 2.1V and collector current of 50A, it offers efficient performance. Operating at temperatures up to 175°C, this IGBT has a turn-off time of 450ns, making it suitable for high-power applications.

50 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

395 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

450 ns

53 ns

2.1 V