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384 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB20N120IHRWG by Onsemi

NGTB20N120IHRWG

Onsemi

NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.

40 A

1200 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

384 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

NGTB30N120IHRWG by Onsemi

NGTB30N120IHRWG

Onsemi

NGTB30N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 384W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.

60 A

1200 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

384 W

Insulated Gate BIP Transistors

NO

Tin (Sn)

NGTB40N120IHRWG by Onsemi

NGTB40N120IHRWG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;

80 A

1200 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

384 W

Insulated Gate BIP Transistors

NO

MATTE TIN