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357 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB15N135IHRWG by Onsemi

NGTB15N135IHRWG

Onsemi

NGTB15N135IHRWG by Onsemi is an N-CHANNEL IGBT with 357W power dissipation, 175 °C max temp, and 1350V collector-emitter voltage. Ideal for high-power applications like industrial motor drives and renewable energy systems due to its 30A collector current capability and 20V gate-emitter voltage.

30 A

1350 V

6.5 V

20 V

e3

175 Cel

N-CHANNEL

357 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn) - annealed

IHW15N120R2 by Infineon Technologies

IHW15N120R2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AD

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

357 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

432 ns

DGTD120T40S1PT by Diodes Incorporated

DGTD120T40S1PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

357 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

387 ns

132 ns

2.4 V

STGWA75H65DFB2 by STMicroelectronics

STGWA75H65DFB2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 115 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

115 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

44 ns

2 V

STGW75H65DFB2-4 by STMicroelectronics

STGW75H65DFB2-4

STMicroelectronics

STGW75H65DFB2-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 115A, and Pmax of 357W. Ideal for power control applications due to its fast turn-off time (toff) of 231ns and high collector-emitter voltage of 650V. Package style is flange mount with through-hole terminals.

COLLECTOR

115 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

42 ns

2 V