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270 W Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW45NC60VD by STMicroelectronics

STGW45NC60VD

STMicroelectronics

STGW45NC60VD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 90 A collector current, and a fast turn-off time of 366 ns. Ideal for high-performance switching in industrial systems.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

366 ns

46 ns

IGW50N65H5AXKSA1 by Infineon Technologies

IGW50N65H5AXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

213 ns

33 ns

2.1 V

IKW50N65F5AXKSA1 by Infineon Technologies

IKW50N65F5AXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

196 ns

35 ns

2.1 V

AIGW50N65F5XKSA1 by Infineon Technologies

AIGW50N65F5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT;

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

35 ns

2.1 V

AIGW50N65H5XKSA1 by Infineon Technologies

AIGW50N65H5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON;

COLLECTOR

80 A

650 V

SINGLE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

213 ns

33 ns

2.1 V

AIKW50N65DF5XKSA1 by Infineon Technologies

AIKW50N65DF5XKSA1

Infineon Technologies

Infineon's AIKW50N65DF5XKSA1 is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 270W power dissipation. Ideal for power control applications, it features a built-in diode, 196ns turn-off time, and operates b/w -40 to 175°C.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

35 ns

2.1 V

AIKW50N65DH5XKSA1 by Infineon Technologies

AIKW50N65DH5XKSA1

Infineon Technologies

Infineon's AIKW50N65DH5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it features a built-in diode, 196ns toff, and 35ns ton for efficient switching in high-power systems. AEC-Q101 certified for automotive use.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

270 W

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

196 ns

35 ns

2.1 V