Loading...

258 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB30M65DF2 by STMicroelectronics

STGB30M65DF2

STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-263AB

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

258 W

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V

STGWA30M65DF2 by STMicroelectronics

STGWA30M65DF2

STMicroelectronics

STGWA30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCEsat, 60A IC, and 258W power dissipation. Ideal for power control applications due to its fast turn-off time of 310ns and high operating temperature of 175°C. Package style is flange mount with through-hole terminals.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

258 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V

STGW30M65DF2 by STMicroelectronics

STGW30M65DF2

STMicroelectronics

STGW30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 258W power dissipation. Ideal for POWER CONTROL applications, it features a built-in diode, 310ns turn-off time, and -55 to 175°C operating temperature range.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

258 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

310 ns

47 ns

2 V