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234 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH450B100H4Q2F2PG by Onsemi

NXH450B100H4Q2F2PG

Onsemi

NXH450B100H4Q2F2PG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Nominal Turn Off Time of 224ns, making it ideal for POWER CONTROL applications. With a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 234W, this IGBT operates in temperatures ranging from -40°C to 150°C.

ISOLATED

101 A

1000 V

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

5.7 V

20 V

R-XUFM-X56

6

56

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

234 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

224 ns

42 ns

2.25 V

NXH450B100H4Q2F2SG by Onsemi

NXH450B100H4Q2F2SG

Onsemi

NXH450B100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.25V and a Max Collector-Emitter Voltage of 1000V, making it ideal for POWER CONTROL applications requiring high power dissipation up to 234W. With a Nominal Turn Off Time of 224ns, this RECTANGULAR package IGBT operates in temperatures ranging from -40 °C to 150°C.

ISOLATED

101 A

1000 V

3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

5.7 V

20 V

R-XUFM-X56

6

56

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

234 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

224 ns

42 ns

2.25 V