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230.8 W Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AFGHL30T65RQDN by Onsemi

AFGHL30T65RQDN

Onsemi

AFGHL30T65RQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.82V and a max IC of 42A. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175 °C, it offers high power dissipation up to 230.8W in a rectangular package style suitable for flange mount installations.

COLLECTOR

42 A

650 V

SINGLE WITH BUILT-IN DIODE

6.3 V

20 V

TO-247

R-PSFM-T3

e3

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

230.8 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

POWER CONTROL

SILICON

139 ns

48 ns

1.82 V