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215 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
F4-50R07W2H3_B51 by Infineon Technologies

F4-50R07W2H3_B51

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel;

ISOLATED

65 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X28

4

28

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

215 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

342 ns

34 ns

1.7 V

FD-DF80R12W1H3_B52 by Infineon Technologies

FD-DF80R12W1H3_B52

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 215 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;

ISOLATED

1200 V

6.5 V

20 V

150 Cel

-40 Cel

N-Channel

215 W

SILICON

320 ns

43 ns

2.4 V

F3L25R12W1T4B27BOMA1 by Infineon Technologies

F3L25R12W1T4B27BOMA1

Infineon Technologies

Infineon's F3L25R12W1T4B27BOMA1 IGBT features 1200V VCEsat, 375ns toff, and 215W power dissipation. Ideal for power control applications with N-CHANNEL polarity, it offers fast switching and high current handling capabilities in a complex configuration.

ISOLATED

45 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X19

4

19

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

215 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

375 ns

54 ns

2.25 V