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180 W Insulated Gate Bipolar Transistors (IGBT) 5

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWS38IH130D by STMicroelectronics

STGWS38IH130D

STMicroelectronics

STGWS38IH130D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 1300 V, a nominal turn-off time of 740 ns, and can handle up to 180 W dissipation. Ideal for high-temperature applications with a max operating temp of 150 °C.

55 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

DF120R12W2H3B27BOMA1 by Infineon Technologies

DF120R12W2H3B27BOMA1

Infineon Technologies

Infineon's DF120R12W2H3B27BOMA1 IGBT features 1200V VCEsat, 50A IC, and 180W power dissipation. Ideal for high-power applications like motor drives, renewable energy systems, and industrial automation due to its N-CHANNEL polarity and fast switching times.

ISOLATED

50 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X20

3

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

360 ns

60 ns

2.4 V

IXGA20N120A3-TRL by IXYS Corporation

IXGA20N120A3-TRL

IXYS Corporation

IXGA20N120A3-TRL by IXYS Corp is a N-CHANNEL IGBT with VCEsat of 2.5V, IC of 40A, and Pmax of 180W. Ideal for POWER CONTROL applications due to its fast ton of 66ns and high VCE rating of 1200V. This surface mount device operates b/w -55 to +150 °C for efficient power management.

LOW CONDUCTION LOSS

COLLECTOR

40 A

1200 V

SINGLE

5 V

20 V

TO-263AA

R-PSSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

180 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1530 ns

66 ns

2.5 V

STGWA30IH65DF by STMicroelectronics

STGWA30IH65DF

STMicroelectronics

STGWA30IH65DF from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates efficiently b/w -55 °C to 175 °C. Ideal for high-power switching tasks in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

312 ns

2.05 V

STGP30IH65DF by STMicroelectronics

STGP30IH65DF

STMicroelectronics

STGP30IH65DF by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

233 ns

2.05 V