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178 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IKFW90N60EH3XKSA1 by Infineon Technologies

IKFW90N60EH3XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 77 A; Nominal Turn On Time (ton): 76 ns;

ISOLATED

77 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

178 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

312 ns

76 ns

2.3 V

IKFW75N60ETXKSA1 by Infineon Technologies

IKFW75N60ETXKSA1

Infineon Technologies

Infineon IKFW75N60ETXKSA1 is an N-Channel IGBT with VCEsat of 2V, toff of 417ns, and Pmax of 178W. Ideal for high-power applications like motor drives and inverters due to its max VCE of 600V, IC of 80A, and operating temp range from -40°C to 175°C.

ISOLATED

80 A

600 V

5.7 V

20 V

e3

175 Cel

-40 Cel

N-Channel

178 W

TIN

SILICON

417 ns

79 ns

2 V