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168 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW20H65FB by STMicroelectronics

STGW20H65FB

STMicroelectronics

STGW20H65FB by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 40A IC, and 168W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.

40 A

650 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

168 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED

STGWT20HP65FB by STMicroelectronics

STGWT20HP65FB

STMicroelectronics

STGWT20HP65FB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. With a built-in diode and fast switching times (ton: 159ns, toff: 185ns), it's ideal for high-performance systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

168 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

185 ns

159 ns

2 V