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1546 W Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS900R08A2P2B31BOSA1 by Infineon Technologies

FS900R08A2P2B31BOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 1546 W; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 750 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Case Connection: ISOLATED;

ISOLATED

750 V

6.5 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

1546 W

NOT SPECIFIED

SILICON

820 ns

500 ns

6.5 V

FS900R08A2P2B32BOSA1 by Infineon Technologies

FS900R08A2P2B32BOSA1

Infineon Technologies

Infineon's FS900R08A2P2B32BOSA1 IGBT features 750V VCE, 6.5V VGE, and 1546W Ptot. Ideal for high-power applications with N-Channel polarity, it operates b/w -40°C to 150°C efficiently with fast turn-on/off times of 500ns and 820ns respectively.

ISOLATED

750 V

6.5 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

1546 W

NOT SPECIFIED

SILICON

820 ns

500 ns

6.5 V