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146 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH80T120L2Q0SG by Onsemi

NXH80T120L2Q0SG

Onsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

65 A

1200 V

20 V

1

150 Cel

146 W

Insulated Gate BIP Transistors

2.8 V

NXH80T120L2Q0PG by Onsemi

NXH80T120L2Q0PG

Onsemi

NXH80T120L2Q0PG by Onsemi is an IGBT with VCEsat of 2.8V, Pdiss of 146W, and VCEmax of 1200V. Ideal for high-power applications requiring a max IC of 65A and operating temperatures up to 150 °C.

65 A

1200 V

20 V

1

150 Cel

NOT SPECIFIED

146 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.8 V

NXH40T120L3Q1PG by Onsemi

NXH40T120L3Q1PG

Onsemi

Onsemi's NXH40T120L3Q1PG is an N-CHANNEL IGBT with 1200V VCEsat, 2.2V, and 42A IC. Ideal for POWER CONTROL applications due to its 146W power dissipation, -40 to 150 °C operating temp range, and fast switching times of 83ns turn on and 305ns turn off.

ISOLATED

42 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

146 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

305 ns

83 ns

2.2 V

NXH40T120L3Q1SG by Onsemi

NXH40T120L3Q1SG

Onsemi

NXH40T120L3Q1SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 305ns toff, and 146W power dissipation. Ideal for POWER CONTROL applications, it features a max operating temperature of 150 °C and 42A IC.

ISOLATED

42 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X44

12

44

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

146 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

305 ns

83 ns

2.2 V