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145 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FP15R12W2T4BOMA1 by Infineon Technologies

FP15R12W2T4BOMA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V;

15 A

1200 V

20 V

1

175 Cel

NOT SPECIFIED

145 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.25 V

F3L15R12W2H3B27BOMA1 by Infineon Technologies

F3L15R12W2H3B27BOMA1

Infineon Technologies

Infineon's F3L15R12W2H3B27BOMA1 IGBT is N-CHANNEL with 12 elements, VCEsat of 2.4V, and toff of 355ns. Ideal for power control applications, it has a max VCE of 1200V, IC of 20A, and ton of 67ns. Operating from -40 to +150 °C, UL approved for reliability.

ISOLATED

20 A

1200 V

COMPLEX

6.5 V

20 V

R-XUFM-X34

12

34

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

145 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

355 ns

67 ns

2.4 V

IKFW50N60DH3XKSA1 by Infineon Technologies

IKFW50N60DH3XKSA1

Infineon Technologies

IKFW50N60DH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 53A, and Pmax of 145W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 268ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT, Terminal finish: TIN, Case connection: ISOLATED.

ISOLATED

53 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

145 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

268 ns

58 ns

2.3 V