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11500 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1800R17HP4B29BOSA2 by Infineon Technologies

FZ1800R17HP4B29BOSA2

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Collector-Emitter Voltage: 1700 V; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2.25 V;

ISOLATED

1700 V

6.4 V

20 V

1

150 Cel

-40 Cel

N-Channel

11500 W

SILICON

1860 ns

880 ns

2.25 V

FD1000R33HE3KB60BPSA1 by Infineon Technologies

FD1000R33HE3KB60BPSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 11500 W; Nominal Turn Off Time (toff): 3550 ns; Case Connection: ISOLATED; Nominal Turn On Time (ton): 1150 ns; Maximum Operating Temperature: 150 Cel;

ISOLATED

3300 V

6.4 V

20 V

150 Cel

-40 Cel

N-Channel

11500 W

SILICON

3550 ns

1150 ns

3.1 V

FD1000R33HL3KB60BPSA1 by Infineon Technologies

FD1000R33HL3KB60BPSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 11500 W; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 1050 ns; Maximum Operating Temperature: 150 Cel;

ISOLATED

3300 V

6.4 V

20 V

150 Cel

-40 Cel

N-Channel

11500 W

SILICON

4700 ns

1050 ns

2.85 V