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9.6 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGB03N120H2ATMA1 by Infineon Technologies

IGB03N120H2ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

IGP03N120H2XKSA1 by Infineon Technologies

IGP03N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; JEDEC-95 Code: TO-220AB;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IGW03N120H2FKSA1 by Infineon Technologies

IGW03N120H2FKSA1

Infineon Technologies

IGW03N120H2FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 9.6A. It has a nominal turn-off time of 403ns and nominal turn-on time of 16.1ns, making it ideal for power control applications requiring fast switching capabilities at temperatures up to 150°C.

COLLECTOR

9.6 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

IKP03N120H2XKSA1 by Infineon Technologies

IKP03N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Application: POWER CONTROL;

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IKW03N120H2FKSA1 by Infineon Technologies

IKW03N120H2FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IKB03N120H2ATMA1 by Infineon Technologies

IKB03N120H2ATMA1

Infineon Technologies

Infineon's IKB03N120H2ATMA1 is an N-CHANNEL IGBT with 1200V VCE, 9.6A IC, and 403ns toff. Ideal for power control applications, it features a built-in diode in a small outline package for surface mount assembly.

HIGH SPEED

COLLECTOR

9.6 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns