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800 A Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BSM400GA170DLCHOSA1 by Infineon Technologies

BSM400GA170DLCHOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; JESD-30 Code: R-XUFM-X5; No. of Terminals: 5;

ISOLATED

800 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

930 ns

200 ns

FZ800R16KF4NOSA1 by Infineon Technologies

FZ800R16KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;

800 A

1600 V

COMPLEX

R-XUFM-X5

2

5

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

1600 ns

1000 ns

FF400R07A01E3S6XKSA2 by Infineon Technologies

FF400R07A01E3S6XKSA2

Infineon Technologies

FF400R07A01E3S6XKSA2 by Infineon is an N-Channel IGBT with a max VCEsat of 6.5V, IC of 800A, and Pdiss of 1500W. Ideal for high-power applications like industrial motor drives due to its high voltage and current capabilities.

ISOLATED

800 A

700 V

6.5 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

1500 W

NOT SPECIFIED

SILICON

530 ns

140 ns

6.5 V

NVG800A75L4DSC by Onsemi

NVG800A75L4DSC

Onsemi

NVG800A75L4DSC by Onsemi is an N-CHANNEL IGBT with 750V VCE, 800A IC, and 1.55V VCEsat. Ideal for power control applications, it features a series connected configuration with built-in diode and operates b/w -40 to 175°C.

800 A

750 V

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

6.2 V

20 V

R-XXMA-X15

2

15

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

N-CHANNEL

YES

UNSPECIFIED

UNSPECIFIED

POWER CONTROL

SILICON

855 ns

347 ns

1.55 V