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660 A Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD400R33KF2CNOSA1 by Infineon Technologies

FD400R33KF2CNOSA1

Infineon Technologies

Infineon's FD400R33KF2CNOSA1 is an N-CHANNEL IGBT with 3300V VCE, 660A IC, and 4800W power dissipation. Ideal for power control applications due to its 1900ns turn-off time and 480ns turn-on time. Package style is flange mount with isolated case connection.

ISOLATED

660 A

3300 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X5

1

5

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

4.25 V

FS450R12OE4BOSA1 by Infineon Technologies

FS450R12OE4BOSA1

Infineon Technologies

Infineon's FS450R12OE4BOSA1 is an N-CHANNEL IGBT with 6 elements, 1200V VCEsat, and 660A IC. Ideal for power control applications, it features a 2250W max power dissipation, -40 to 150 °C operating temp range, and UL approval.

ISOLATED

660 A

1200 V

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X29

6

29

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

2250 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

290 ns

2.1 V

FF400R33KF2CNOSA1 by Infineon Technologies

FF400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4800 W; Maximum Collector Current (IC): 660 A; No. of Terminals: 10;

ISOLATED

660 A

3300 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X10

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4800 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FD400R33KF2CKNOSA1 by Infineon Technologies

FD400R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 660 A; Nominal Turn On Time (ton): 480 ns; JESD-30 Code: R-XUFM-X7;

ISOLATED

660 A

3300 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns