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65 A Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FP50R06W2E3BOMA1 by Infineon Technologies

FP50R06W2E3BOMA1

Infineon Technologies

FP50R06W2E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector current of 65A, and turn off time of 470ns. It is used for power control applications, featuring a max operating temp. of 175°C and max. collector-emitter voltage of 600V in a rectangular package style with flange mount.

ISOLATED

65 A

600 V

COMPLEX

R-XUFM-X35

7

35

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

470 ns

85 ns

FS35R12W1T4BOMA1 by Infineon Technologies

FS35R12W1T4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 65 A; No. of Elements: 6; Case Connection: ISOLATED;

ISOLATED

65 A

1200 V

COMPLEX

R-XUFM-X15

6

15

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

520 ns

57 ns

FS35R12W1T4B11BOMA1 by Infineon Technologies

FS35R12W1T4B11BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 65 A; No. of Terminals: 18; Transistor Element Material: SILICON;

ISOLATED

65 A

1200 V

COMPLEX

R-XUFM-X18

6

18

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

520 ns

57 ns

F4-50R07W2H3_B51 by Infineon Technologies

F4-50R07W2H3_B51

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel;

ISOLATED

65 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X28

4

28

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

215 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

342 ns

34 ns

1.7 V

NXH80T120L2Q0SG by Onsemi

NXH80T120L2Q0SG

Onsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

65 A

1200 V

20 V

1

150 Cel

146 W

Insulated Gate BIP Transistors

2.8 V

NXH80T120L2Q0PG by Onsemi

NXH80T120L2Q0PG

Onsemi

NXH80T120L2Q0PG by Onsemi is an IGBT with VCEsat of 2.8V, Pdiss of 146W, and VCEmax of 1200V. Ideal for high-power applications requiring a max IC of 65A and operating temperatures up to 150 °C.

65 A

1200 V

20 V

1

150 Cel

NOT SPECIFIED

146 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.8 V

IRGIB4640DPBF by Infineon Technologies

IRGIB4640DPBF

Infineon Technologies

N-Channel; Maximum Collector Current (IC): 65 A; Transistor Element Material: SILICON; Maximum Gate-Emitter Voltage: 20 V; Nominal Turn On Time (ton): 64 ns; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

65 A

600 V

6.5 V

20 V

175 Cel

-55 Cel

NOT SPECIFIED

N-Channel

NOT SPECIFIED

SILICON

119 ns

64 ns

1.9 V