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53 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IGW30N60TPXKSA1 by Infineon Technologies

IGW30N60TPXKSA1

Infineon Technologies

IGW30N60TPXKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a collector current of 53A. It has a turn-off time of 279ns and a turn-on time of 38ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.

53 A

600 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

279 ns

38 ns

IKFW60N60DH3EXKSA1 by Infineon Technologies

IKFW60N60DH3EXKSA1

Infineon Technologies

IKFW60N60DH3EXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector current (IC) of 53A. It is commonly used for power control applications due to its high power dissipation of 141W and fast nominal turn on time (ton) of 60ns.

ISOLATED

53 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

141 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

219 ns

60 ns

2.7 V

IKFW50N60DH3XKSA1 by Infineon Technologies

IKFW50N60DH3XKSA1

Infineon Technologies

IKFW50N60DH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 53A, and Pmax of 145W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 268ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT, Terminal finish: TIN, Case connection: ISOLATED.

ISOLATED

53 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

145 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

268 ns

58 ns

2.3 V