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4930 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R12HP4HOSA2 by Infineon Technologies

FZ1200R12HP4HOSA2

Infineon Technologies

FZ1200R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, max. collector-emitter voltage of 1200V, and max. collector current of 4930A. It has a complex configuration for power control applications, with nominal turn-off time of 1550ns and turn-on time of 890ns. The package style is flange mount with isolated case connection.

ISOLATED

4930 A

1200 V

COMPLEX

R-XUFM-X9

1

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1550 ns

890 ns

FZ1600R12HP4HOSA2 by Infineon Technologies

FZ1600R12HP4HOSA2

Infineon Technologies

FZ1600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 4930A max collector current. It has a complex configuration, 3 elements, and is used for power control applications. With a turn off time of 1550ns and turn on time of 890ns, it offers efficient performance in high-power systems.

ISOLATED

4930 A

1200 V

COMPLEX

R-XUFM-X9

1

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1550 ns

890 ns

FZ3600R12HP4HOSA2 by Infineon Technologies

FZ3600R12HP4HOSA2

Infineon Technologies

FZ3600R12HP4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 3 elements, 1200V max collector-emitter voltage, and 4930A max collector current. It is used for power control applications due to its complex configuration and silicon transistor element material. The device has a nominal turn off time of 1550ns and a turn on time of 890ns, making it suitable for high-power operations.

ISOLATED

4930 A

1200 V

COMPLEX

R-XUFM-X9

1

3

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1550 ns

890 ns