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37 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FP30R06KE3BOSA1 by Infineon Technologies

FP30R06KE3BOSA1

Infineon Technologies

Infineon's FP30R06KE3BOSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 37A max collector current, and 750ns nominal turn-off time. Its complex configuration makes it suitable for high-power applications like industrial motor drives and renewable energy systems.

ISOLATED

37 A

600 V

COMPLEX

R-XUFM-X24

7

24

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

750 ns

170 ns

FP30R06W1E3BOMA1 by Infineon Technologies

FP30R06W1E3BOMA1

Infineon Technologies

FP30R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 600V, and max. collector current of 37A. It has a nominal turn off time of 245ns and turn on time of 42ns, making it ideal for power control applications requiring fast switching capabilities at up to 175°C operating temperature.

ISOLATED

37 A

600 V

COMPLEX

R-XUFM-X23

7

23

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

245 ns

42 ns

FP30R06W1E3B11BOMA1 by Infineon Technologies

FP30R06W1E3B11BOMA1

Infineon Technologies

Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.

ISOLATED

37 A

600 V

COMPLEX

R-XUFM-X23

7

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

245 ns

42 ns