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34 A Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS30R06VE3BOMA1 by Infineon Technologies

FS30R06VE3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 34 A; Package Shape: RECTANGULAR; No. of Terminals: 13;

ISOLATED

34 A

600 V

COMPLEX

R-XUFM-X13

6

13

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

245 ns

42 ns

IRG4BC30S-STRLP by Infineon Technologies

IRG4BC30S-STRLP

Infineon Technologies

IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.

COLLECTOR

34 A

600 V

SINGLE

R-PSSO-G2

1

2

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

1550 ns

40 ns

IKFW40N60DH3EXKSA1 by Infineon Technologies

IKFW40N60DH3EXKSA1

Infineon Technologies

IKFW40N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 34A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a turn-off time of 184ns and operates b/w -40 to 175°C.

ISOLATED

34 A

600 V

SINGLE WITH BUILT-IN DIODE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

111 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

50 ns

2.7 V

HGTP7N60A4-F102 by Onsemi

HGTP7N60A4-F102

Onsemi

HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.

LOW CONDUCTION LOSS

COLLECTOR

34 A

600 V

SINGLE

85 ns

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

235 ns

205 ns

17 ns

2.7 V