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3 A Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGD3NB60SD-1 by STMicroelectronics

STGD3NB60SD-1

STMicroelectronics

STGD3NB60SD-1 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 3A IC, and 48W Pd. It operates up to 175 °C making it ideal for power applications requiring high voltage switching in surface mount designs.

3 A

600 V

4.5 V

20 V

e3

1

175 Cel

260

N-CHANNEL

48 W

Insulated Gate BIP Transistors

YES

MATTE TIN

30