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26.9 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGB3440G2-F085 by Onsemi

FGB3440G2-F085

Onsemi

FGB3440G2-F085 by Onsemi is an N-CHANNEL IGBT with 26.9A IC, 390V VCE, and 166W power dissipation. Ideal for applications requiring high power handling and temperature resistance up to 175°C. Suitable for surface mount assembly with a rise time of 7000ns and fall time of 15000ns.

26.9 A

390 V

15000 ns

2.2 V

12 V

e3

1

175 Cel

260

N-CHANNEL

166 W

7000 ns

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

30

FGD3440G2-F085V by Onsemi

FGD3440G2-F085V

Onsemi

Onsemi's FGD3440G2-F085V is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.75V, rise time of 7ns, and power dissipation of 166W. With a max operating temperature of 175 °C, it offers reliable performance in harsh environments.

COLLECTOR

26.9 A

40 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15 ns

2.2 V

14 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

166 W

7 ns

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

26 ns

7.6 ns

11 ns

3 ns

1.75 V