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256 A Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH200T120H3Q2F2SG by Onsemi

NXH200T120H3Q2F2SG

Onsemi

NXH200T120H3Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat and 256A IC. Ideal for POWER CONTROL applications, it has a tr of 102ns, tf of 99ns, and toff of 1096ns. This COMPLEX transistor operates b/w -40 °C to 150°C with a max power dissipation of 679W in a RECTANGULAR package style.

ISOLATED

256 A

1200 V

COMPLEX

99 ns

6.5 V

20 V

R-XUFM-X56

4

56

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

679 W

102 ns

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1096 ns

373 ns

2.3 V