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24 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS15R12VT3BOMA1 by Infineon Technologies

FS15R12VT3BOMA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 24 A; Transistor Element Material: SILICON; Terminal Position: UPPER;

ISOLATED

24 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X11

6

11

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

72 ns

STGF20NB60S by STMicroelectronics

STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

ISOLATED

24 A

600 V

SINGLE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

3600 ns

162 ns

NGTB15N60R2FG by Onsemi

NGTB15N60R2FG

Onsemi

NGTB15N60R2FG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 24A IC, and 54W power dissipation. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and motor control.

24 A

600 V

7 V

20 V

e3

175 Cel

N-CHANNEL

54 W

Insulated Gate BIP Transistors

NO

MATTE TIN