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23 A Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRG4BC30W-STRL by International Rectifier

IRG4BC30W-STRL

International Rectifier

IRG4BC30W-STRL by International Rectifier is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 23A. It has a Nominal Turn Off Time of 300ns and Nominal Turn On Time of 41ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals for surface mount installation.

LOW CONDUCTION LOSS

COLLECTOR

23 A

600 V

SINGLE

R-PSSO-G2

e0

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN LEAD

GULL WING

SINGLE

POWER CONTROL

SILICON

300 ns

41 ns

RGTH40TK65DGC11 by ROHM

RGTH40TK65DGC11

ROHM

ROHM RGTH40TK65DGC11 is an N-CHANNEL IGBT with 650V VCE, 23A IC, and 141ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and FLANGE MOUNT package style.

ISOLATED

23 A

650 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

141 ns

47 ns