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19 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGF35HF60W by STMicroelectronics

STGF35HF60W

STMicroelectronics

STMicroelectronics' STGF35HF60W is an N-CHANNEL IGBT with 600V VCE, 19A IC, and 40W Pd. It operates up to 150 °C making it ideal for high-power applications like motor drives and inverters.

19 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

40 W

Insulated Gate BIP Transistors

NO

STG3P2M10N60B by STMicroelectronics

STG3P2M10N60B

STMicroelectronics

STG3P2M10N60B from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.5V, supports up to 600V, and has a nominal turn-off time of just 99ns. Ideal for high-performance applications in industrial drives and renewable energy systems.

19 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X16

6

16

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

99 ns

27 ns

2.5 V

FB15R06KL4B1BOMA1 by Infineon Technologies

FB15R06KL4B1BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 19 A; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

ISOLATED

19 A

600 V

COMPLEX

R-XUFM-X26

7

26

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

249 ns

71 ns