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1390 A Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DF1000R17IE4BOSA1 by Infineon Technologies

DF1000R17IE4BOSA1

Infineon Technologies

DF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 1390A max collector current, and 1890ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and thermistor, rectangular package shape, and flange mount style. Operating at a max temperature of 175°C, it offers efficient performance in high-power systems.

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X12

1

12

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

FD1000R17IE4BOSA2 by Infineon Technologies

FD1000R17IE4BOSA2

Infineon Technologies

Infineon's FD1000R17IE4BOSA2 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 1390A max collector current. Ideal for power control applications, it features a built-in diode, thermistor, and isolated case connection. With a turn on time of 720ns and turn off time of 1890ns, this rectangular package transistor operates at up to 175°C.

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X12

1

12

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

FF1000R17IE4BOSA1 by Infineon Technologies

FF1000R17IE4BOSA1

Infineon Technologies

FF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max Collector-Emitter Voltage of 1700V and a Nominal Turn Off Time of 1890ns, making it ideal for POWER CONTROL applications. The transistor features a Max Collector Current of 1390A and operates at temperatures up to 175°C in a FLANGE MOUNT package style.

ISOLATED

1390 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X7

2

7

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

DF1000R17IE4DB2BOSA1 by Infineon Technologies

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL;

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X12

1

12

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

6250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1910 ns

830 ns

2.45 V

FD1000R17IE4DB2BOSA1 by Infineon Technologies

FD1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Peak Reflow Temperature (C): NOT SPECIFIED; Nominal Turn On Time (ton): 830 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

1390 A

1700 V

6.4 V

20 V

150 Cel

-40 Cel

NOT SPECIFIED

N-Channel

6250 W

NOT SPECIFIED

SILICON

1910 ns

830 ns

2.45 V

FF1000R17IE4DB2BOSA1 by Infineon Technologies

FF1000R17IE4DB2BOSA1

Infineon Technologies

Infineon's FF1000R17IE4DB2BOSA1 IGBT features N-CHANNEL configuration with 2 elements, built-in diode, and thermistor. Ideal for power control applications with max VCEsat of 2.45V and max IC of 1390A. Operates in temp range -40 to 150°C, offering high power dissipation up to 6250W.

ISOLATED

1390 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-PUFM-X12

2

12

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

6250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1400 ns

760 ns

2.45 V