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138 A Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VS-150MT060WDF by Vishay Intertechnology

VS-150MT060WDF

Vishay Intertechnology

VS-150MT060WDF by Vishay Intertechnology is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max collector-emitter voltage of 600V and can handle a max collector current of 138A. Ideal for power control applications due to its high power dissipation of 57W and fast turn-off time of 458ns.

ISOLATED

138 A

600 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.2 V

20 V

R-PUFM-P14

2

14

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

57 W

UL RECOGNIZED

NO

PIN/PEG

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

458 ns

247 ns