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130 A Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWA60NC60WDR by STMicroelectronics

STGWA60NC60WDR

STMicroelectronics

STGWA60NC60WDR by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 130A max collector current, and 340W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 343ns.

130 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

340 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

343 ns

69 ns

BSM100GD60DLCBOSA1 by Infineon Technologies

BSM100GD60DLCBOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;

ISOLATED

130 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X39

6

39

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

180 ns

36 ns

FS75R17KE3BOSA1 by Infineon Technologies

FS75R17KE3BOSA1

Infineon Technologies

FS75R17KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 1100 ns and ton of 450 ns, ideal for high-power applications. With a max voltage of 1700 V and current of 130 A, it's suitable for industrial power systems.

ISOLATED

130 A

1700 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1100 ns

450 ns

BSM100GB60DLCHOSA1 by Infineon Technologies

BSM100GB60DLCHOSA1

Infineon Technologies

Infineon's BSM100GB60DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 180ns turn-off time, and 130A collector current. It operates up to 150°C, has a max voltage of 600V, and features a built-in diode. Ideal for power electronics applications requiring high efficiency and fast switching capabilities.

ISOLATED

130 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

180 ns

37 ns

FS100R12KS4BOSA1 by Infineon Technologies

FS100R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; JESD-30 Code: R-XUFM-X39; No. of Terminals: 39;

ISOLATED

130 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X39

6

39

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

390 ns

190 ns

F4100R12KS4BOSA1 by Infineon Technologies

F4100R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

ISOLATED

130 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

4

26

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F4100R06KL4BOSA1 by Infineon Technologies

F4100R06KL4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; No. of Elements: 4; Package Body Material: UNSPECIFIED;

ISOLATED

130 A

600 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

180 ns

36 ns