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1200 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1200R12KF4NOSA1 by Infineon Technologies

FZ1200R12KF4NOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Terminal Position: UPPER; No. of Terminals: 7;

ISOLATED

1200 A

1200 V

COMPLEX

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1050 ns

700 ns

FF800R12KE3NOSA1 by Infineon Technologies

FF800R12KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

1200 A

1200 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1140 ns

880 ns

FZ800R12KE3HOSA1 by Infineon Technologies

FZ800R12KE3HOSA1

Infineon Technologies

FZ800R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 1200A. It has a turn on time of 440ns and turn off time of 1000ns, making it ideal for power control applications requiring high efficiency and performance in a flange mount package.

ISOLATED

1200 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1000 ns

440 ns

FD800R17KE3B2NOSA1 by Infineon Technologies

FD800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; No. of Terminals: 7; Package Shape: RECTANGULAR;

ISOLATED

1200 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

1900 ns

900 ns

FF800R17KE3B2NOSA1 by Infineon Technologies

FF800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;

ISOLATED

1200 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

900 ns

FF800R17KP4B2NOSA2 by Infineon Technologies

FF800R17KP4B2NOSA2

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X10; Transistor Element Material: SILICON;

ISOLATED

1200 A

1700 V

SEPARATE, 2 ELEMENTS

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1650 ns

790 ns

FZ800R12KS4B2NOSA1 by Infineon Technologies

FZ800R12KS4B2NOSA1

Infineon Technologies

FZ800R12KS4B2NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1200A max collector current. It has a complex configuration, 660ns turn-off time, and 225ns turn-on time. Ideal for high-power applications requiring fast switching capabilities in industrial equipment and power electronics systems.

ISOLATED

1200 A

1200 V

COMPLEX

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

660 ns

225 ns

FZ1200R17HP4HOSA2 by Infineon Technologies

FZ1200R17HP4HOSA2

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; JESD-30 Code: R-XUFM-X4; Terminal Form: UNSPECIFIED;

ISOLATED

1200 A

1700 V

COMPLEX

R-XUFM-X4

1

2

4

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1810 ns

960 ns