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SINGLE WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 15

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FD600R06ME3_B11_S2 by Infineon Technologies

FD600R06ME3_B11_S2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector-Emitter Voltage: 600 V; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;

ISOLATED

600 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

1

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

960 ns

275 ns

DF1000R17IE4BOSA1 by Infineon Technologies

DF1000R17IE4BOSA1

Infineon Technologies

DF1000R17IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 1390A max collector current, and 1890ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and thermistor, rectangular package shape, and flange mount style. Operating at a max temperature of 175°C, it offers efficient performance in high-power systems.

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X12

1

12

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

DF1400R12IP4DBOSA1 by Infineon Technologies

DF1400R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 7700 W; Maximum Gate-Emitter Voltage: 20 V; Terminal Position: UPPER;

ISOLATED

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X6

1

6

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

7700 W

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1200 ns

340 ns

2.1 V

DF600R12IP4DBOSA1 by Infineon Technologies

DF600R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; JESD-30 Code: R-XUFM-X8; Nominal Turn Off Time (toff): 1350 ns;

ISOLATED

600 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X8

1

8

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1350 ns

370 ns

DF650R17IE4BOSA1 by Infineon Technologies

DF650R17IE4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Terminal Form: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

ISOLATED

930 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

720 ns

DF900R12IP4DBOSA1 by Infineon Technologies

DF900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Package Body Material: UNSPECIFIED; Transistor Application: POWER CONTROL;

ISOLATED

900 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X6

1

6

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1300 ns

370 ns

FD1000R17IE4BOSA2 by Infineon Technologies

FD1000R17IE4BOSA2

Infineon Technologies

Infineon's FD1000R17IE4BOSA2 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 1390A max collector current. Ideal for power control applications, it features a built-in diode, thermistor, and isolated case connection. With a turn on time of 720ns and turn off time of 1890ns, this rectangular package transistor operates at up to 175°C.

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X12

1

12

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

FD1400R12IP4DBOSA1 by Infineon Technologies

FD1400R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1400 A; No. of Elements: 1; Maximum Operating Temperature: 175 Cel;

ISOLATED

1400 A

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

1

11

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1200 ns

340 ns

FD900R12IP4DBOSA1 by Infineon Technologies

FD900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Qualification: Not Qualified; Case Connection: ISOLATED;

ISOLATED

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X8

1

8

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1300 ns

370 ns

FD650R17IE4BOSA2 by Infineon Technologies

FD650R17IE4BOSA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 930 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 720 ns;

ISOLATED

930 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X10

1

10

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1870 ns

720 ns

DF1000R17IE4DB2BOSA1 by Infineon Technologies

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 1390 A; Transistor Application: POWER CONTROL;

ISOLATED

1390 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X12

1

12

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-Channel

6250 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1910 ns

830 ns

2.45 V

FD600R06ME3S2BOSA1 by Infineon Technologies

FD600R06ME3S2BOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 9; Package Body Material: UNSPECIFIED;

ISOLATED

600 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X9

1

9

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

960 ns

275 ns

DF900R12IP4DVBOSA1 by Infineon Technologies

DF900R12IP4DVBOSA1

Infineon Technologies

DF900R12IP4DVBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It features a built-in diode, thermistor, and UL approval. Ideal for applications requiring high power switching with -40°C min operating temp and 1300ns turn-off time.

ISOLATED

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X10

1

10

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

1300 ns

370 ns

FD900R12IP4DVBOSA1 by Infineon Technologies

FD900R12IP4DVBOSA1

Infineon Technologies

Infineon's FD900R12IP4DVBOSA1 IGBT features 1200V max collector-emitter voltage, 1300ns turn-off time, and 370ns turn-on time. Ideal for applications requiring N-channel single configuration with built-in diode and thermistor. Suitable for UL-recognized systems needing isolated case connection in -40°C operating conditions.

ISOLATED

1200 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

R-PUFM-X10

1

10

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

GENERAL PURPOSE

SILICON

1300 ns

370 ns

DF1000R17IE4PBPSA1 by Infineon Technologies

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 1000 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;

ISOLATED

1000 A

1700 V

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-PUFM-X12

1

12

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1890 ns

720 ns

2.45 V