Loading...

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVG800A75L4DSC by Onsemi

NVG800A75L4DSC

Onsemi

NVG800A75L4DSC by Onsemi is an N-CHANNEL IGBT with 750V VCE, 800A IC, and 1.55V VCEsat. Ideal for power control applications, it features a series connected configuration with built-in diode and operates b/w -40 to 175°C.

800 A

750 V

SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE

6.2 V

20 V

R-XXMA-X15

2

15

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

N-CHANNEL

YES

UNSPECIFIED

UNSPECIFIED

POWER CONTROL

SILICON

855 ns

347 ns

1.55 V