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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DF100R07W1H5FPB53BPSA1 by Infineon Technologies

DF100R07W1H5FPB53BPSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Minimum Operating Temperature: -40 Cel; JESD-30 Code: R-XUFM-X26;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

2

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

40 ns

17 ns

DF100R07W1H5FPB53BPSA2 by Infineon Technologies

DF100R07W1H5FPB53BPSA2

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; No. of Elements: 2; Terminal Position: UPPER;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

2

26

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

40 ns

17 ns

DF100R07W1H5FPB54BPSA2 by Infineon Technologies

DF100R07W1H5FPB54BPSA2

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum VCEsat: 1.55 V; Terminal Position: UPPER;

ISOLATED

40 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

4.75 V

20 V

R-XUFM-X14

2

14

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

IEC-61140

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

30 ns

12.6 ns

1.55 V

DF80R07W1H5FPB11BPSA1 by Infineon Technologies

DF80R07W1H5FPB11BPSA1

Infineon Technologies

DF80R07W1H5FPB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. Ideal for power control applications with a max VCEsat of 1.72V and collector-emitter voltage of 650V. Features fast turn-off time (124ns) and operates b/w -40 to 150°C.

ISOLATED

20 A

650 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

4.75 V

20 V

R-XUFM-X18

2

18

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

124 ns

17 ns

1.72 V