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PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FZ1600R17KE3NOSA1 by Infineon Technologies

FZ1600R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2300 A; JESD-30 Code: R-XUFM-X7; Package Style (Meter): FLANGE MOUNT;

ISOLATED

2300 A

1700 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

1

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

SILICON

1770 ns

750 ns

FZ2400R17KE3NOSA1 by Infineon Technologies

FZ2400R17KE3NOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 3200 A; Terminal Form: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

3200 A

1700 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1890 ns

850 ns

FZ800R12KL4CNOSA1 by Infineon Technologies

FZ800R12KL4CNOSA1

Infineon Technologies

FZ800R12KL4CNOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements in parallel. It has a max voltage of 1200V, max current of 1300A, and turn-off time of 1100ns. Ideal for power control applications due to its high performance and isolated case connection.

ISOLATED

1300 A

1200 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1100 ns

450 ns

FZ800R33KF2CNOSA1 by Infineon Technologies

FZ800R33KF2CNOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7;

ISOLATED

1300 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

9600 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

1900 ns

480 ns

4.25 V

FZ1000R33HE3BOSA1 by Infineon Technologies

FZ1000R33HE3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1000 A; No. of Terminals: 7;

ISOLATED

1000 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

9600 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns

3.1 V

FD1600/1200R17KF6C_B2 by Infineon Technologies

FD1600/1200R17KF6C_B2

Infineon Technologies

N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2600 A; Package Body Material: UNSPECIFIED; Transistor Element Material: SILICON;

ISOLATED

2600 A

1700 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X9

2

9

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

360 ns

490 ns

FZ1000R33HE3BPSA1 by Infineon Technologies

FZ1000R33HE3BPSA1

Infineon Technologies

Infineon's FZ1000R33HE3BPSA1 is a N-CHANNEL IGBT with 2 elements in parallel. It has a max collector current of 1000A and turn off time of 3550ns, suitable for power control applications. The transistor operates at a max voltage of 3300V, featuring silicon material and isolated case connection.

ISOLATED

1000 A

3300 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

3550 ns

1150 ns