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BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 1

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
APTGF150H120G by Microsemi

APTGF150H120G

Microsemi

APTGF150H120G by Microsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. Ideal for motor control applications, it offers a max VCEsat of 3.7V and can handle up to 200A of collector current. With a max operating temperature of 150°C, this IGBT has a built-in diode and nominal turn-off time of 390ns.

ISOLATED

200 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X12

e1

1

4

12

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

961 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

390 ns

190 ns

3.7 V