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2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
F475R12KS4BOSA1 by Infineon Technologies

F475R12KS4BOSA1

Infineon Technologies

F475R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 banks, series connected, center tap, and 2 elements with built-in diode. It has a max VCEsat of 3.75V and a max collector-emitter voltage of 1200V, making it ideal for power control applications requiring high voltage handling capabilities. With a nominal turn-off time of 390ns and a max power dissipation of 500W, this rectangular package transistor offers efficient performance in various power control systems.

ISOLATED

100 A

1200 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X24

4

24

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

3.75 V

NXH450N65L4Q2F2S1G by Onsemi

NXH450N65L4Q2F2S1G

Onsemi

NXH450N65L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 2 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.2V and can handle up to 365W power dissipation. Ideal for POWER CONTROL applications due to its high Collector Current (IC) of 167A and low Turn Off Time (toff) of 694ns.

ISOLATED

167 A

650 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

5.2 V

20 V

R-XUFM-X36

4

36

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

365 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

694 ns

211 ns

2.2 V

F4100R06KL4BOSA1 by Infineon Technologies

F4100R06KL4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; No. of Elements: 4; Package Body Material: UNSPECIFIED;

ISOLATED

130 A

600 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

180 ns

36 ns

F4200R06KL4BOSA1 by Infineon Technologies

F4200R06KL4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 225 A; Package Shape: RECTANGULAR; JESD-30 Code: R-XUFM-X26;

ISOLATED

225 A

600 V

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

4

26

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

330 ns

230 ns