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16 RF & Microwave Amplifiers 65

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
MGA-23003-BLKG by Broadcom

MGA-23003-BLKG

Broadcom

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.

50 ohm

COMPONENT

32 dB

15 dBm

SURFACE MOUNT

1

16

3800 MHz

3300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

MGA-23003-TR1G by Broadcom

MGA-23003-TR1G

Broadcom

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.

50 ohm

COMPONENT

32 dB

15 dBm

SURFACE MOUNT

1

16

3800 MHz

3300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

MGA-25203-BLKG by Broadcom

MGA-25203-BLKG

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

27 dB

15 dBm

SURFACE MOUNT

1

16

5900 MHz

4900 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

MGA-25203-TR1G by Broadcom

MGA-25203-TR1G

Broadcom

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

27 dB

15 dBm

SURFACE MOUNT

1

16

5900 MHz

4900 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3.3

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

ADPA7002AEHZ-R7 by Analog Devices

ADPA7002AEHZ-R7

Analog Devices

ADPA7002AEHZ-R7 by Analog Devices is a ceramic-packaged RF amplifier with 25 dBm CW input power, 13.5 dB gain, and wideband medium power technology. It operates b/w -40 °C to 85°C, suitable for applications requiring surface mounting in the frequency range of 18-44 GHz.

50 ohm

COMPONENT

13.5 dB

25 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC

5

WIDE BAND MEDIUM POWER

GAAS

HMC716ALP3ETR by Analog Devices

HMC716ALP3ETR

Analog Devices

HMC716ALP3ETR by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 50 ohm impedance. It has a max input power of 10 dBm and VSWR of 1.38, suitable for narrow band low power applications in the RF & Microwave field. The component is constructed using GaAs technology and can operate b/w -40 to 85 °C temperature range.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

ADPA7004CHIP-SX by Analog Devices

ADPA7004CHIP-SX

Analog Devices

ADPA7004CHIP-SX by Analog Devices is a PHEMT technology RF amplifier with 13dB gain, operating from 40-80GHz. It has a max input power of 18dBm and VSWR of 1.15, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13 dB

18 dBm

SURFACE MOUNT

1

16

80000 MHz

40000 MHz

85 Cel

-55 Cel

DIE OR CHIP

-0.4,3.5

WIDE BAND MEDIUM POWER

PHEMT

1.15

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

MATTE TIN

1.43

HMC5805LS6TR by Analog Devices

HMC5805LS6TR

Analog Devices

Analog Devices' HMC5805LS6TR is a GAAS RF amplifier with 13.5 dB gain, operating up to 40 GHz. With a max input power of 17 dBm and VSWR of 7, it's ideal for wideband low-power applications in RF & microwave systems requiring high-frequency amplification. The ceramic package and surface-mounting feature make it suitable for various environments, from -40 °C to 85°C.

50 ohm

COMPONENT

13.5 dB

17 dBm

SURFACE MOUNT

1

16

40000 MHz

85 Cel

-40 Cel

CERAMIC

LCC16,.24SQ,40/32

10

WIDE BAND LOW POWER

GAAS

7

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADL8104ACPZN by Analog Devices

ADL8104ACPZN

Analog Devices

ADL8104ACPZN by Analog Devices is a PHEMT RF amplifier with 10dB gain, 400-7500MHz frequency range, and 25dBm CW input power. Widely used in RF & microwave applications due to its wide band medium power capabilities and surface mounting feature.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADL8104ACPZN-R7 by Analog Devices

ADL8104ACPZN-R7

Analog Devices

ADL8104ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 10 dB gain, operating from 400 MHz to 7500 MHz. It has a max input power of 25 dBm and VSWR of 1.58, suitable for wideband medium-power applications. With a compact surface-mount construction and operating temperatures from -40 °C to 85°C, it's ideal for RF and microwave systems.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

50 ohm

COMPONENT

11 dB

20 dBm

e3

SURFACE MOUNT

1

16

6000 MHz

4800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

3/5

WIDE BAND LOW POWER

100 mA

PHEMT

Matte Tin (Sn) - annealed

1.43

BTS6302UJ by NXP Semiconductors

BTS6302UJ

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 5000 MHz;

50 ohm

COMPONENT

33.8 dB

10 dBm

SURFACE MOUNT

1

16

5000 MHz

2300 MHz

115 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

IEC-60134

120 mA

1.67