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SOP SRAM 52

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS66WVS4M8ALL-104NLI by Integrated Silicon Solution

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

IS66WVS4M8ALL-104NLI by Integrated Silicon Solution is a 4MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 33554432 bit and operates at an industrial temperature grade. Ideal for applications requiring high-speed data processing in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

33554432 bit

STANDARD SRAM

8

1

1

8

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

1.65 V

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.

104 MHz

COMMON

R-PDSO-G8

4.9 mm

16777216 bit

STANDARD SRAM

8

1

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

.0002 Amp

2.7 V

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

CY14ME064J2-SXQT by Infineon Technologies

CY14ME064J2-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Enable: NO; Organization: 8KX8;

3.4 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

3

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

4 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm

CY14ME064Q2A-SXQT by Infineon Technologies

CY14ME064Q2A-SXQT

Infineon Technologies

NON-VOLATILE SRAM; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Output Enable: NO;

40 MHz

COMMON

R-PDSO-G8

4.889 mm

65536 bit

NON-VOLATILE SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

105 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

1.727 mm

.00025 Amp

4.5 V

6 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

1.27 mm

DUAL

3.8985 mm