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LBGA SRAM 55

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CYD18S36V18-167BBAI by Cypress Semiconductor

CYD18S36V18-167BBAI

Cypress Semiconductor

CYD18S36V18-167BBAI by Cypress Semiconductor is a 512Kx36 MULTI-PORT SRAM with 167 MHz fCLK. Operating at -40 to 85 °C, it has a low profile GRID ARRAY package and consumes up to 780 mA at 1.5/1.8 Vsup. Ideal for industrial applications requiring fast access times and high memory density.

4 ns

PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V

167 MHz

COMMON

S-PBGA-B256

e0

17 mm

18874368 bit

MULTI-PORT SRAM

36

3

1

2

256

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA256,16X16,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8

Not Qualified

1.7 mm

.35 Amp

1.4 V

SRAMs

780 mA

1.58 V

1.42 V

1.5

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

17 mm

CY7C1518KV18-250BZXC by Cypress Semiconductor

CY7C1518KV18-250BZXC

Cypress Semiconductor

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

DDR SRAM

18

3

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.5/1.8,1.8

Not Qualified

1.4 mm

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

20

13 mm

CY7C1470BV25-200BZI by Cypress Semiconductor

CY7C1470BV25-200BZI

Cypress Semiconductor

ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e0

17 mm

75497472 bit

ZBT SRAM

36

3

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.5

Not Qualified

1.4 mm

2.38 V

SRAMs

450 mA

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

UPD44644182AF5-E40-FQ1-A by Renesas Electronics

UPD44644182AF5-E40-FQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

.45 ns

250 MHz

COMMON

R-PBGA-B165

17 mm

75497472 bit

DDR SRAM

18

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

MOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

CY7C0853V-133BBC by Cypress Semiconductor

CY7C0853V-133BBC

Cypress Semiconductor

CY7C0853V-133BBC by Cypress Semiconductor is a 256Kx36 SRAM with synchronous operation at 133MHz. It features a low profile grid array package and operates at 3.3V, making it ideal for high-speed memory applications in commercial-grade devices. With a memory density of 9437184 bits and fast access time of 4.7ns, it offers efficient parallel data processing capabilities.

4.7 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

S-PBGA-B172

e0

15 mm

9437184 bit

MULTI-PORT SRAM

36

3

1

2

172

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA172,14X14,40

SQUARE

GRID ARRAY, LOW PROFILE

PARALLEL

220

3.3

Not Qualified

1.25 mm

.075 Amp

3.14 V

SRAMs

400 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

CY7C1440AV33-167BZC by Cypress Semiconductor

CY7C1440AV33-167BZC

Cypress Semiconductor

CY7C1440AV33-167BZC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 1048576 words, 3.3V supply, and 3.4ns access time. It operates synchronously in commercial temperature range for applications requiring high-speed memory solutions.

3.4 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

e0

17 mm

37748736 bit

CACHE SRAM

36

3

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

Not Qualified

1.4 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

CY7C1380KV33-167BZIT by Infineon Technologies

CY7C1380KV33-167BZIT

Infineon Technologies

CACHE SRAM; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit; Additional Features: PIPELINED OPERATION;

3.4 ns

PIPELINED OPERATION

167 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

CACHE SRAM

36

3

1

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

YES

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

.065 Amp

3.135 V

163 mA

3.6 V

3.135 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

13 mm