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Cypress Semiconductor Flash Memory 8

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
S40410081B1B1I000 by Cypress Semiconductor

S40410081B1B1I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1I000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at -40 to 85 °C, it has a supply voltage range of 2.7-3.6 V and features synchronous operation for industrial applications.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B1W000 by Cypress Semiconductor

S40410081B1B1W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1W000 is a synchronous flash memory with 8GX8 organization, MLC NAND type, and 68719476736-bit memory density. It operates at 3V with a temperature range of -25 to 85 °C. Suitable for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B2I000 by Cypress Semiconductor

S40410081B1B2I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2I000 is a 100-terminal, 8GX8 organization, MLC NAND flash memory with 68719476736-bit density. Operating at -40 to 85 °C, it features synchronous mode and parallel interface for industrial applications. Package: PLASTIC/EPOXY, RECTANGULAR shape, GRID ARRAY style with low profile.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410081B1B2W000 by Cypress Semiconductor

S40410081B1B2W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B2W000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at 3V, it offers 8589934592 words and features synchronous operation in a low profile grid array package. Ideal for applications requiring high memory capacity and fast data access speeds.

4

R-PBGA-B100

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B1I010 by Cypress Semiconductor

S40410161B1B1I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1I010 is a 16GX8 MLC NAND Flash Memory with 17179869184 words capacity. Operating at -40 to 85 °C, it has a supply voltage range of 2.7V to 3.6V for industrial applications. This rectangular package features a very thin profile, fine pitch grid array design suitable for synchronous operations in various electronic devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1W010 by Cypress Semiconductor

S40410161B1B1W010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1W010 is a 16GX8 MLC NAND flash memory with 17179869184 words. Operating at 3V, it has a memory density of 137438953472 bits and supports synchronous mode. With a very thin profile and fine pitch grid array package, it is ideal for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B2I010 by Cypress Semiconductor

S40410161B1B2I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B2I010 is a 16GX8 MLC NAND flash memory with 137.4 Gb density. Operating at 3V, it has a temperature range of -40 to 85°C and uses synchronous parallel technology. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package measuring 18mm x 14mm x 1.4mm.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

S40410161B1B2W010 by Cypress Semiconductor

S40410161B1B2W010

Cypress Semiconductor

S40410161B1B2W010 by Cypress Semiconductor is a 16GX8 MLC NAND Flash Memory with 137.4Gb density. Operating at 3V, it has a low profile grid array package and synchronous mode for parallel programming. Ideal for applications requiring high memory capacity in compact devices with temperatures ranging from -25 to 85°C.

4

R-PBGA-B100

18 mm

137438953472 bit

FLASH

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm